thin film deposition中文是什么意思
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用"thin film deposition"造句"thin film deposition"怎么读"thin film deposition" in a sentence
中文翻译手机版
- 薄膜沉积系统
- "thin"中文翻译 adj. (thinner; thinnest) 1.薄 ...
- "film"中文翻译 n. 1.薄层,薄膜;薄雾,轻烟;细丝状的东西。 2.【 ...
- "deposition"中文翻译 n. 1.免职,罢免;废位。 2.淤积[沉积](物,作用 ...
- "thin-film deposition" 中文翻译 : 薄膜沉积; 薄膜淀积
- "chemical vacuum thin-film deposition" 中文翻译 : 化学真空薄膜沉积
- "deposition, chemical vacuum thin-film" 中文翻译 : 化学真空薄膜沉积
- "film deposition" 中文翻译 : 薄膜淀积
- "thin film" 中文翻译 : 薄膜工艺
- "thin film; film; diaphragm" 中文翻译 : 薄膜
- "chemical vapor deposition film" 中文翻译 : 化学汽相淀积膜
- "deposition film disk" 中文翻译 : 沉积薄膜磁盘; 沉积薄漠磁盘; 沉积膜磁碟
- "vacuum deposition film" 中文翻译 : 真空镀膜
- "adhesion of thin film" 中文翻译 : 薄膜的附着力
- "adrasion resistance of thin film" 中文翻译 : 薄膜的抗磨强度
- "agitated thin-film evaporator" 中文翻译 : 搅拌薄膜蒸发器
- "capacitor, thin-film" 中文翻译 : 薄膜电容器
- "ceramic thin film" 中文翻译 : 陶瓷薄膜
- "circuit fabrication thin-film" 中文翻译 : 薄模电路制造
- "compatible thin-film circuit" 中文翻译 : 相容薄膜电路
- "cvd superconducting thin film" 中文翻译 : cvd超导薄膜
- "discrete thin film component" 中文翻译 : 分立薄膜元件
- "discrete thin-film component" 中文翻译 : 分立薄膜元件
- "discrete thin-film componetn" 中文翻译 : 个别薄膜成份
- "disordered thin film" 中文翻译 : 无序薄膜
- "distributed thin film waveguide" 中文翻译 : 分布薄膜波导
例句与用法
- A lot thin film deposition experiments have been carried out and the optimal condition for the deposition is obtained
这里基于国产设备进行了大量的实验,得到了丰富的测试数据。 - The analysis is instructive for future research , though its application is currently limited by the conditions in practice . an in - situ optical monitor system for thin film deposition is developed
虽然最优化方法在实际监控及反演过程中受到应用条件的限制,但是这些分析对于今后工作的指导是很有意义的。 - Ocean optics has pioneered an optical coatings production methodology that combines modern optical thin film deposition techniques with the precision and mass - production capabilities of microlithographic procedures
中国海洋光学公司领先研发了一种光学涂层产品方法,结合了先进的光学薄膜沉积技术和精确的大规模微型平版印刷生产能力。 - The properties of cn thin films such as their morphology , component , crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed , showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique , , the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process , based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted , which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
采用pld技术进行了碳氮化合物薄膜沉积,得到了含氮量为21at的cn薄膜;研究了衬底温度和反应气体压强对薄膜结构特性的影响,给出了cn薄膜中n含量较小、 sp ~ 3键合结构成分较少和薄膜中仅含有局域cn晶体的原因;引入脉冲辉光放电等离子体增强pld的气相反应,给出了提高薄膜晶态sp ~ 3键合结构成分和薄膜的含n量可行性途径;应用pe - cvd技术以ch _ 4 + n _ 2为反应气体并引入辅助气体h _ 2 ,得到了含n量为56at的晶态cn薄膜;探讨了cn薄膜形貌、成分、晶体结构、价键状态等特性及其与气体压强和放电电流的关系,证明了- c _ 3n _ 4薄膜沉积为满足动力学平衡条件的各种反应过程的竞争结果;采用光学发射谱技术对cn薄膜生长过程进行了实时诊断,得到了实验参量对等离子体中活性粒子相对浓度和气相反应过程的影响规律,给出了cn薄膜沉积的主要反应前驱物,揭示了cn薄膜特性和等离子体内反应过程之间的联系;采用高气压pe - pld技术研究了不同衬底温度条件下cn化合物薄膜的结构特性,揭示了si原子对薄膜生长过程的影响,给出了si基表面碳氮薄膜的生长模式;在金刚石研磨和催化剂fe处理的si衬底上进行cn薄膜沉积,证明了通过控制材料表面动力学条件可以改变碳氮薄膜结构特性,并可显著提高晶态碳氮材料的生长速率。 - The best process for high quality tio _ ( 2 ) thin film deposited on k9 glass by reb is studied by using orthogonal test method , the se results indicate that the best process for tio _ ( 2 ) thin film deposition is the substrate temperature of 300 , the total gas press in the chamber of 2 x 10 ~ 2pa and the deposition rate of 0 . 2 nm - s - 1 , of which the substrate temperature has influence on the optical properties of the deposited films notably
文中首先以tio _ 2薄膜的折射率和消光系数为研究对象,采用l9正交试验法研究了在k9玻璃上制备高光学质量tio _ 2薄膜的最佳工艺条件。椭圆偏振仪的测试结果表明,制备tio _ 2薄膜的最佳工艺条件为:基片温度300 ,工作真空2 10 ~ ( - 2 ) pa ,沉积速率0 . 2nm ? s ~ ( - 1 ) ,其中基片温度对薄膜光学常数的影响最大,该结果具有较好的可重现性。
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